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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC2233 description collector-emitter breakdown voltage- :v ceo = 60v(min) dc current gain- : h fe = 30(min)@ (v ce = 5v, i c = 1a) high collector current high collector power dissipation applications tv horizontal deflecti on output application absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 4 a i cm collector current-peak 10 a i b b base current-continuous 1 a collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2233 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 4a; i b =0.4a b 1.0 v v be (sat) base-emitter saturation voltage i c = 4a; i b =0.4a b 1.5 v a i cbo collector cutoff current v cb = 170v ; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 h fe -1 dc current gain i c = 1a ; v ce = 5v 30 150 h fe -2 dc current gain i c = 4a ; v ce = 5v 20 f t current-gain?bandwidth product i c = 500ma; v ce = 5v 8 mhz isc website www.iscsemi.cn 2 |
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